Heavy ion-induced damage in SiC Schottky barrier diode

Silicon carbide (SiC) is a very promising material for future electronic devices. Also it is an attractive material for space applications, that require long-term endurance and higher efficiency, where tolerance to space radiations is a major problem. In this study, we have performed some irradiation examinations and evaluations on a commercial SiC Schottky barrier diode by looking at the damage caused by ion incidence using heavy ions. Ions of Xe, Kr, Ar, Ne, and N, with specific energies, were used in the irradiation process. Sudden breakdown condition at higher bias voltage and gradual damage created by heavy ion incidence were confirmed. The collected charge spectra were also obtained and revealed mechanisms that resulted to permanent damage. The observed anomalous charge collection was an essential factor for the susceptibility. This indicates a problem that need to be solved in the future for SiC space application.