کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1816726 1525270 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Leakage current in Ti/4H-SiC Schottky barrier diode
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Leakage current in Ti/4H-SiC Schottky barrier diode
چکیده انگلیسی

The Ti/4H-SiC Schottky barrier diodes with an edge termination structure are fabricated. The low on-resistance of 3mΩcm2 and low-leakage current of 10-2-10-4A/cm2 over 1500 V are obtained. Current–voltage characteristics are evaluated by device simulation considering metal–semiconductor interface conditions such as bunching steps and interface pinning traps. Device simulation suggests that the variation of barrier height originated from the variation of interface pinning-trap concentration influences on the leakage current. Bunching steps have an effect on the leakage current because the electric field is enhanced at the bottom of the bunching steps.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 376–377, 1 April 2006, Pages 370–373
نویسندگان
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