کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1816835 1525271 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Muonium states and dynamics in 4H and 6H silicon carbide
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Muonium states and dynamics in 4H and 6H silicon carbide
چکیده انگلیسی
Two isotropic Mu0 centers are found in 4H Silicon Carbide (SiC) and a total of four Mu0 states are seen in the 6H-SiC polytype. We report the temperature dependence of hyperfine constants, signal amplitudes, and relaxation rates for three Mu0 centers in p-type 6H-SiC from spin precession data at 6 T. Low-field results for the diamagnetic fraction imply two ionization steps with energies of 0.21 and 0.88 eV. Additional dynamics seen in several different SiC samples are discussed; however, specific assignments of site or charge-state transitions are not yet certain.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 374–375, 31 March 2006, Pages 368-371
نویسندگان
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