کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1817415 1525696 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of planar and point defects on the basal-plane conductivity of HoBaCuO single crystals
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Influence of planar and point defects on the basal-plane conductivity of HoBaCuO single crystals
چکیده انگلیسی


• The resistance of HoBaCuO single crystals is investigated.
• Electron–phonon scattering and fluctuation terms are quantified.
• Twin boundaries are found to reduce the transverse coherence length.

The resistivity along and across twin boundaries in HoBa2Cu3O7−δ single crystals is investigated in the temperature range Tc–300K. It is revealed that the twin boundaries enhance inhomogeneity of the oxygen distribution, whereby regions near them are depleted in oxygen. The normal-state conductivity is determined by scattering of electrons on phonons and defects both along and across the twin boundaries. Near TcTc, the electrical conductivity can be described within the framework of the 3D Aslamazov–Larkin fluctuation model. It is found that the twin boundaries increase the intensity of the electron–phonon scattering and reduce the transverse coherence length ξc(0)ξc(0).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity and its Applications - Volume 516, 15 September 2015, Pages 58–61
نویسندگان
, , , , ,