Peeling stress analysis for an inhomogeneous high-Tc superconductor with a discontinuous interface at the substrate

This paper presents an analysis of a superconductor–substrate system to calculate the peeling stress of a high temperature superconductor (HTS) when the temperature decreases from ambient to operating conditions (cryogenic temperatures). Firstly, the values for the material properties of the inhomogeneous high temperature superconductor (HTS) were obtained by fitting a second order polynomial to the experimental data. It is assumed that the material properties of the inhomogeneous HTS vary with varying height coordinate and temperature. Then, through the proposed graded finite element method, the coupled thermo-mechanical equations were solved numerically. The numerical results show that the thermal stress generated in the inhomogeneous HTS is larger on a SiTiO3 substrate than on a MgO substrate. The maximum thermal stresses, i.e., the peeling stresses, occur near the bottom corner of the inhomogeneous HTS and may induce fracture behavior at the bi-material interface. The inhomogeneous HTS cools at a slower pace than the homogeneous HTS from the room temperature to the operating temperature. It is also shown that the magnitude of the peeling stress for a homogeneous HTS is larger than that for an inhomogeneous HTS. It is intended that the model presented here be useful to researchers who are interested in the mechanical properties of an inhomogeneous HTS.

Research highlights
► The thermal stress generated in the inhomogeneous HTS is larger on a SiTiO3 substrate than on a MgO substrate.
► The maximum thermal stresses, i.e., the peeling stresses, occur near the bottom corner of the inhomogeneous HTS and may induce fracture behavior at the bi-material interface.
► The inhomogeneous HTS cools at a slower pace than the homogeneous HTS from the room temperature to the operating temperature.
► The magnitude of the peeling stress for a homogeneous HTS is larger than that for an inhomogeneous HTS.