Modified Lanthanum Zirconium Oxide buffer layers for low-cost, high performance YBCO coated conductors

The pyrochlore Lanthanum Zirconium Oxide, La2Zr2O7 (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO2 cap/YSZ barrier/Y2O3 seed on Ni–5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La2O3–ZrO2 system. Using a metal–organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of LaxZr1−xOy (x = 0.2–0.6) on standard Y2O3 buffered Ni–5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2–0.6 in LaxZr1−xOy. Both CeO2 cap layers and MOD–YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, Ic of 274–292 A/cm at 77 K and self-field were achieved for MOD–YBCO films grown on LaxZr1−xOy (x = 0.4–0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD LaxZr1−xOy (x = 0.25) films were grown directly on biaxially textured Ni–3W substrates. About 3 μm thick YBCO films grown on a single MOD–LZO buffered Ni–3W substrates using pulsed laser deposition show a critical current density, Jc, of 0.55 MA/cm2 (Ic of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.