کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1819892 | 1525771 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
STM studies on the hole doping dependence of the hidden order in Pb-doped Bi2201
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: STM studies on the hole doping dependence of the hidden order in Pb-doped Bi2201 STM studies on the hole doping dependence of the hidden order in Pb-doped Bi2201](/preview/png/1819892.png)
چکیده انگلیسی
We have performed STM measurements of the modulation-free Pb-doped Bi2201. In the overdoped (Tc = 7 K) and the optimally doped (Tc = 22 K) samples, the distorted patch arrangement has been observed in low-bias STM images below 50 mV. With decreasing doping level, the size of patches becomes smaller and their arrangement more orderly. In the optimally doped sample, furthermore, the bright atomic-strings have been detected at low bias-voltages below 10 mV. The distorted patch arrangement may be regarded as the two-dimensional superstructure incompletely formed due to the absence of the structural modulation and/or the disturbance from doped holes. The atomic-string indicates the one-dimensional electronic correlation and may be the new type hidden order.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity and its Applications - Volumes 463â465, 1 October 2007, Pages 40-43
Journal: Physica C: Superconductivity and its Applications - Volumes 463â465, 1 October 2007, Pages 40-43
نویسندگان
K. Kudo, T. Nishizaki, N. Okumura, N. Kobayashi,