کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1819937 1525771 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Significant improvement of flux pinning and irreversibility field of nano-Ho2O3 doped MgB2
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Significant improvement of flux pinning and irreversibility field of nano-Ho2O3 doped MgB2
چکیده انگلیسی
Mg1−x(Ho2O3)xB2 alloys are prepared by in situ solid state reaction to investigate the magnetic Ho2O3 dopant on the flux pinning behaviour in MgB2. Ho2O3 doping does not change the crystal structure, Tc, and Hc2 of MgB2, however, Jc and Hirr have been significantly enhanced. Jc of 1.2 × 105 A/cm2 at 5 K in 5 T field is achieved for the best sample, significantly higher than the values achieved by the non-magnetic impurities, such as Ti-, Zr, Y2O3-doped MgB2. The observed magnetic HoB4 particles with a size between 5 and 10 nm were attributed to be the source for the enhanced flux pinning effects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity and its Applications - Volumes 463–465, 1 October 2007, Pages 220-224
نویسندگان
, ,