کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1819952 1525771 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Doping effects of some metallic elements for SiC/MgB2 bulk system
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Doping effects of some metallic elements for SiC/MgB2 bulk system
چکیده انگلیسی

Bulk samples of nominal (MgB2)0.9(SiC)0.1−xMx were prepared from the mixture of Mg, B, SiC and MnOm in the 10%H2/Ar atmosphere at 900 °C for 30 min, where M’s were Cu, Nb, Ag, and Pt. Critical current densities Jc’s were estimated from the magnetization data using an extended critical state model. Improvement of Jc was confirmed at 20 K and 1 T for the samples of x = 0.03(Cu)-, 0.01(Ag)- and 0.02(Pt)-samples. Impurity of Cu–Mg–Si, Ag–Mg and Mg2PtSi were the effective pinning centers together with Mg2Si in this system.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity and its Applications - Volumes 463–465, 1 October 2007, Pages 286–289
نویسندگان
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