Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers

We present the findings of spin-dependent single hole and pair-hole transport across the p-type high mobility silicon quantum well (Si-QW) confined by the superconductor delta-barriers on the n-type Si (1 0 0) surface. The oscillations of the conductance in normal state and the zero-resistance supercurrent in superconductor state as a function of the bias voltage are found to be correlated by on- and off-resonance tuning the two-dimensional subbands of holes with the Fermi energy in the superconductor barriers.