کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1820449 | 1525785 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Growth via pulsed laser deposition and characterization of thin films of the electron-doped superconductor Sm2−xCexCuO4−y Growth via pulsed laser deposition and characterization of thin films of the electron-doped superconductor Sm2−xCexCuO4−y](/preview/png/1820449.png)
We report on the growth of thin films of the electron-doped superconductor Sm2−xCexCuO4−y (SCCO) by pulsed laser deposition (PLD). Electrical resistivity ρ(H, T) measurements on the thin films were made at temperatures T between 20 mK and 300 K in magnetic fields H up to 18 T. The superconducting transition temperature is as high as Tc = 17.8 K, with a transition width ΔTc = 0.93 K, for an optimally doped film. The ρ(H, T) measurements on this thin film are compared to similar measurements made on single crystals. A vortex-glass scaling analysis was applied to the ρ(H, T) data, yielding values of the vortex-glass melting temperature Tg and critical exponent ν(z − 1). In addition, ρ(H, T) data are presented for an underdoped sample with x = 0.125, also grown via PLD.
Journal: Physica C: Superconductivity - Volume 443, Issues 1–2, 1 September 2006, Pages 38–42