C60 films as etching masks for creation of micrometer and submicrometer YBa2Cu3O7 structures

We have developed a new technique for etching of high-temperature superconducting YBa2Cu3O7 (YBCO) thin films using C60 etching mask. The minimal pattern size 0.5 μm was reached in the process of the ion beam etching. Wet chemical etching in Br-ethanol using C60 mask was successfully realized. In the case of the chemical etching as a mask we have a 400 nm thick patterned C60 layer due its insolubility in Br-ethanol. The submicron patterning of the YBCO films, thick up to 600 nm, was realized using Ar ion beam etching through the patterned C60 film. In this case, the C60 mask, 600-800 nm thick, was created by lift off technique in PMMA electron resist.