کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1820831 | 1525789 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of lower critical fields of MgB2 thin films on SiC/Si substrate with parallel magnetic fields
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Lower critical fields Hc1 of MgB2 thin films grown on SiC-buffered Si substrate were investigated with magnetic fields applied parallel to the film surface. MgB2 films were prepared by sequential evaporation of boron and magnesium on SiC/Si substrate. The amount of supplied boron was adjusted so as to result in 200 nm stoichiometric MgB2 film after reaction with the excess Mg top layer. In order to estimate Hc1, the film was zero-field cooled, and the initial (virgin) magnetization was measured with increasing field. Square root of magnetic deviation from the perfect diamagnetism was plotted against the applied field, and Hc1 was evaluated from extrapolation analyses. The temperature variation can be fitted by the linear dependence with the temperature derivative |dHc1â¥/dT| of 2.4 Oe/K in MgB2/SiC/Si which is smaller than that of 5.2 Oe/K in MgB2/NbN/Si. The difference was examined in relation to the Ginzburg-Landau (GL) parameter, which was estimated to be about 86 with the SiC buffer under the parallel field.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity and its Applications - Volume 435, Issues 1â2, 15 March 2006, Pages 74-77
Journal: Physica C: Superconductivity and its Applications - Volume 435, Issues 1â2, 15 March 2006, Pages 74-77
نویسندگان
Akihiko Nishida, Chihiro Taka, Stefan Chromik, Rudolf Durny,