کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1823421 | 1526426 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK](/preview/png/1823421.png)
چکیده انگلیسی
We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 699, 21 January 2013, Pages 22-26
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 699, 21 January 2013, Pages 22-26
نویسندگان
M. Povoli, A. Bagolini, M. Boscardin, G.-F. Dalla Betta, G. Giacomini, F. Mattedi, E. Vianello, N. Zorzi,