The neon gas field ion source—a first characterization of neon nanomachining properties

At the Charged Particle Optics Conference (CPO7) in 2006, a novel trimer based helium gas field ion source (GFIS) was introduced for use in a new helium ion microscope (HIM), demonstrating the novel source performance attributes and unique imaging applications of the HIM (Hill et al., 2008 [1]; Livengood et al., 2008 [2]). Since that time there have been numerous enhancements to the HIM source and platform demonstrating resolution scaling into the sub 0.5 nm regime (Scipioni et al., 2009 [3]; Pickard et al., 2010 [4]). At this Charged Particle Optics Conference (CPO8) we will be introducing a neon version of the trimer-GFIS co-developed by Carl Zeiss SMT and Intel Corporation. The neon source was developed as a possible supplement to the gallium liquid metal ion source (LMIS) used today in most focused ion beam (FIB) systems (Abramo et al., 1994 [5]; Young et al.,1998 [6]). The neon GFIS source has low energy spread (∼1 eV) and a small virtual source size (sub-nanometer), similar to that of the helium GFIS. However neon does differ from the helium GFIS in two significant ways: neon ions have high sputtering yields (e.g. 1 Si atom per incident ion at 20 keV); and have relatively shallow implant depth (e.g. 46 nm in silicon at 20 keV). Both of these are limiting factors for helium in many nanomachining applications. In this paper we will present both simulation and experimental results of the neon GFIS used for imaging and nanomachining applications.