کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1825554 1027365 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
R&D on novel sensor routing and test structure development
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
R&D on novel sensor routing and test structure development
چکیده انگلیسی

The Central European Consortium designed and prototyped generic test structures (TS) in a R&D study to allow standard monitoring of the process quality of silicon sensors of any given vendor. Furthermore, some novel signal routing strategies for silicon sensors have been applied on the wafers to achieve an implementation of a pitch adapter directly in the sensor, either in the first metal layer or in a second additional metal routing layer. These improvements would allow to connect the readout chip directly to the sensor, omitting an additional pitch adapter. The on-sensor pitch adapter would be reflected by a substantial material budget saving which would be of special interest for the tracking detectors at the super-LHC.After a first batch of improved TS was produced in 2007, a second batch of enhanced TS and additional sensors, with integrated pitch adapters, has been produced by the Institute of Electron Technology in Warsaw, Poland. Some improvements of the TS and the designs of the sensors will be shown. Afterwards a selection of measurements on TS and sensors will be discussed as well as a testbeam and its first results.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 628, Issue 1, 1 February 2011, Pages 268–271
نویسندگان
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