Hg1−xCdxI2/CdTe-based heterostructures as a new high Z material for radiation detectors: VPE growth of micro-pixel arrays

The present paper demonstrates new important technological advantage of Hg1−xCdxI2/CdTe-based heterostructures such as the possibility of selective area vapour phase epitaxy (VPE) growth to form micro-pixel arrays of this material on commercial glass substrates.