Energy levels, oscillator strengths, and radiative rates for Si-like Zn XVII, Ga XVIII, Ge XIX, and As XX

• We have calculated the fine-structure energy levels of Si-like Zn, Ga, Ge and As.
• The calculations are performed using the configuration interaction method (CIV3).
• We have calculated the oscillator strengths, line strengths and transition rates.
• The wavelengths of the transitions are listed in this article.
• We also have made comparisons between our data and other calculations.

The energy levels, oscillator strengths, line strengths, and transition probabilities for transitions among the terms belonging to the 3s23p2, 3s3p3, 3s23p3d, 3s23p4s, 3s23p4p and 3s23p4d configurations of silicon-like ions (Zn XVII, Ga XVIII, Ge XIX, and As XX) have been calculated using the configuration-interaction code CIV3. The calculations have been carried out in the intermediate coupling scheme using the Breit–Pauli Hamiltonian. The present calculations have been compared with the available experimental data and other theoretical calculations. Most of our calculations of energy levels and oscillator strengths (in length form) show good agreement with both experimental and theoretical data. Lifetimes of the excited levels have also been calculated.