کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1834688 1526712 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nuclear Reaction Models Responsible for Simulation of Neutron-induced Soft Errors in Microelectronics
ترجمه فارسی عنوان
مدل های واکنش هسته ای برای شبیه سازی خطاهای نرم افزاری ناشی از نوترون در میکروالکترونیک
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک هسته ای و انرژی بالا
چکیده انگلیسی

Terrestrial neutron-induced soft errors in MOSFETs from a 65 nm down to a 25 nm design rule are analyzed by means of multi-scale Monte Carlo simulation using the PHITS-HyENEXSS code system. Nuclear reaction models implemented in PHITS code are validated by comparisons with experimental data. From the analysis of calculated soft error rates, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that the high energy component from 10 MeV up to several hundreds of MeV in secondary cosmic-ray neutrons has the most significant source of soft errors regardless of design rule.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Data Sheets - Volume 120, June 2014, Pages 254-257