کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1882801 | 1043261 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Recovering behavior of JFET transistors after gamma ray irradiation
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Recovering behavior of JFET transistors after gamma ray irradiation Recovering behavior of JFET transistors after gamma ray irradiation](/preview/png/1882801.png)
چکیده انگلیسی
The recovery of damaged discrete Si-JFET transistors after irradiation with gamma ray doses was investigated. After a long time of relaxation, the samples were submitted gradually to different heating cycles with a maximum temperature of 140 °C. At the end of the relaxation and annealing cycles, some radiation damage was recovered. The obtained recovery by annealing was higher than that resulting from relaxation alone. Evaluation of the irradiation and recovery effects, including the efficiency process, was performed using measurements of electronic noise.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Physics and Chemistry - Volume 80, Issue 3, March 2011, Pages 491–495
Journal: Radiation Physics and Chemistry - Volume 80, Issue 3, March 2011, Pages 491–495
نویسندگان
J. Assaf,