Photoemission study of 6H-SiC(0Â 0Â 0Â 1) surface with deposited Mn atoms

Changes of the valence band electronic structure of 6H polytype SiC crystal were studied. The changes were caused by deposition of Mn atoms on SiC(0 0 0 1) surface cleaned by annealing at 773 K in ultra high vacuum (UHV) conditions. The Mn atoms were deposited in situ sequentially 1 and 2 ML, and the sample was annealed at 773 K. Synchrotron radiation in the energy range from 47 to 51 eV was applied to study photoemission spectra of the valence band. The photoemission spectra corresponding to the Fano resonance for Mn 3p-3d transition were measured and the contributions of Mn3d electrons to the valence band were determined. The results showed appearance of the contribution of Mn3d band corresponding to Mn islands on the SiC. The annealing of the sample leads to the Mn atoms diffusion into the crystal and appearance of the new structure.