Keywords: سطح نیمه هادی; Kelvin method; Contact potential difference; Work function; Mechanic-electrical transformer; Semiconductor surface;
مقالات ISI سطح نیمه هادی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: سطح نیمه هادی; Surface photovoltage; Time-resolved photoemission; Semiconductor surface; Carrier dynamics; Photovoltaics; Colloidal quantum dots;
Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs
Keywords: سطح نیمه هادی; Auger electron spectroscopy; Semiconductor surface; Fermi level shifts; Surface cleaning;
Terahertz generation from electron- and neutron-irradiated semiconductor crystal surfaces
Keywords: سطح نیمه هادی; Terahertz generation; Semiconductor surface; Neutron irradiation; Electron irradiation; GaSe
Au-induced deep groove nanowire structure on the Ge(001) surface: DFT calculations
Keywords: سطح نیمه هادی; Low dimensional physics; Semiconductor surface; Metallic adsorbates; Surface electronic phenomena; density functional theory calculations;
Emission of secondary ions after grazing impact of keV ions on solid surfaces
Keywords: سطح نیمه هادی; Secondary ion mass spectroscopy (SIMS); Grazing ion surface collisions; Ultrathin film; Semiconductor surface; Sputtering
Non-linear kinetic model for oscillatory relaxation of the photovoltage effect on a Si(111)7Â ÃÂ 7 surface
Keywords: سطح نیمه هادی; Surface photovoltage; Carrier dynamics; Time-resolved photoemission; Synchrotron radiation; Semiconductor surface;
Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface
Keywords: سطح نیمه هادی; THz emission; Semiconductor surface; Surface passivation;
Ab-initio study of new Ga-rich GaAs(001) surface (4Â ÃÂ 4) reconstruction
Keywords: سطح نیمه هادی; GaAs; Semiconductor surface; Reconstructions; Electronic structure;
Utility and constraint on the use of pump-probe photoelectron spectroscopy for detecting time-resolved surface photovoltage
Keywords: سطح نیمه هادی; Surface photovoltage; Time-resolved two-photon photoelectron spectroscopy; Semiconductor surface;
Stoichiometry and surface reconstruction of epitaxial CuInSe2(112) films
Keywords: سطح نیمه هادی; Semiconductor surface; Chalcopyrite; Thin film; Solar cell;
Pt-chain induced formation of Ge nanowires on the Ge(001) surface
Keywords: سطح نیمه هادی; Low dimensional physics; Semiconductor surface; Metallic adsorbates; Surface electronic phenomena; Density functional theory calculations;
KBr superstructure templates self-assembled on reconstructed AIIIBV semiconductor surfaces
Keywords: سطح نیمه هادی; Insulating thin film; Semiconductor surface; STM; Epitaxial growth; Template;
Photoemission study of 6H-SiC(0Â 0Â 0Â 1) surface with deposited Mn atoms
Keywords: سطح نیمه هادی; 61.72.uf; 79.60.Bm; Semiconductor surface; Manganese; Photoemission; Valence band;
The interaction between atoms of Au and Cu with clean Si(1Â 1Â 1) surface: A study combining synchrotron radiation grazing incidence X-ray fluorescence analysis and theoretical calculations
Keywords: سطح نیمه هادی; Total X-ray reflection; Grazing incidence X-ray fluorescence (GIXRF) analysis; Semiconductor surface;
Near-field visualization of dynamical processes of semiconductor surface
Keywords: سطح نیمه هادی; 07.79.Fc; 61.82.Fk; 68.47.Fg; 82.56.Lz; 82.56.Na; Near-field; Semiconductor surface; Diffusion constant; Time relaxation; Scanning near-field microscopy;
Peierls instability in Pt chains on Ge(0Â 0Â 1)
Keywords: سطح نیمه هادی; STM; Low dimensional physics; Semiconductor surface; Surface electronic phenomena;
Dissociative adsorption of molecular hydrogen on silicon surfaces
Keywords: سطح نیمه هادی; Semiconductor surface; Hydrogen; Silicon; Dissociative adsorption; Recombinative desorption; Activated adsorption; Sticking coefficient; Reaction dynamics; Scanning tunnelling microscopy; Second-harmonic generation; Supersonic molecular beam;
Local measurement of semiconductor band bending and surface charge using Kelvin probe force microscopy
Keywords: سطح نیمه هادی; Kelvin Probe force microscopy; Semiconductor surface; Surface charge; Surface potential; Surface states; Surface band bending;
First principles total energy studies of the adsorption of germane on Ge(001)-c(2Â ÃÂ 4)
Keywords: سطح نیمه هادی; Ge; H; Germane; Semiconductor surface; First principles calculations;
A theoretical analysis of the TiO2/Sn doped (1Â 1Â 0) surface properties
Keywords: سطح نیمه هادی; TiO2; SnO2; Mixed oxide; Doping process; DFT; Semiconductor surface;