کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1678918 | 1009978 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Near-field visualization of dynamical processes of semiconductor surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Near-field visualization of dynamical processes of semiconductor surface Near-field visualization of dynamical processes of semiconductor surface](/preview/png/1678918.png)
چکیده انگلیسی
The near-field images calculation method for semiconductor surface with inhomogeneous electron distribution, formed by strong focused laser pulse, was proposed. Calculation is performed using Green function method. The main characteristic of the proposed approach is maximal usage analytical computations. The near-field images for the surface of GaAs were obtained at different points of time. Developed approach is universal and could be able to find with experimental data on time-resolved near-field microscopy some parameters of semiconductor surface such as diffusion constant and relaxation time.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 109, Issue 1, December 2008, Pages 39-43
Journal: Ultramicroscopy - Volume 109, Issue 1, December 2008, Pages 39-43
نویسندگان
V.Z. Lozovski, V.O. Vasilenko,