کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1886593 | 1043539 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures](/preview/png/1886593.png)
چکیده انگلیسی
The effect of γ-ray exposure on the metal–insulator–semiconductor (MIS) structures has been investigated using the electrical characteristics at room temperature. The MIS structures are irradiated with 60Co γ-ray source. The energy distribution of interface states was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height and ideality factor. The value of series resistance decreases with increasing dose. Experimental results confirmed that γ-ray irradiation have a significant effect on electrical characteristics of MIS structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Physics and Chemistry - Volume 79, Issue 4, April 2010, Pages 457–461
Journal: Radiation Physics and Chemistry - Volume 79, Issue 4, April 2010, Pages 457–461
نویسندگان
İlke Taşçıoğlu, Adem Tataroğlu, Akif Özbay, Şemsettin Altındal,