The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures

The effect of γ-ray exposure on the metal–insulator–semiconductor (MIS) structures has been investigated using the electrical characteristics at room temperature. The MIS structures are irradiated with 60Co γ-ray source. The energy distribution of interface states was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height and ideality factor. The value of series resistance decreases with increasing dose. Experimental results confirmed that γ-ray irradiation have a significant effect on electrical characteristics of MIS structures.