کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
218941 463229 2014 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Interfacial capacitance of an oxidised copper electrode
ترجمه فارسی عنوان
ظرفیت اینترفاز یک الکترود مس اکسید شده
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
چکیده انگلیسی


• Cu2O is formed during Cu oxidation at −350 mV in 0.1 M KOHaq.
• Components of the interfacial capacitance of oxidised Cu were determined.
• Double layer capacitances of oxidised and metallic Cu electrodes are comparable.

Polycrystalline copper electrodes were oxidised in 0.1 M KOHaq at −350 mV vs. Hg|HgO. The properties of such formed oxide layers were studied by means of X-ray photoelectron spectroscopy and impedance measurements. The layers are composed with Cu2O with properties of a p-type semiconductor. The impedance spectra recorded at potentials of Cu2O formation were found to meet the requirements of correct and valid impedance data. An analysis of data fitting errors allowed selection of the equivalent circuit optimal for Cu2O covered electrodes. The overall interfacial capacitance depends on the electrode potential and on the oxide thickness. Elements of the equivalent circuit describing capacitances of the double layer and of the oxide have been determined. It can be estimated that the double layer capacitance of the oxidised Cu electrode is comparable with the capacitance measured for the metallic surface at potentials of hydrogen evolution.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electroanalytical Chemistry - Volume 713, 15 January 2014, Pages 47–57
نویسندگان
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