کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
220486 | 463335 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A multi-technique study of gold oxidation and semiconducting properties of the compact α-oxide layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A multi-technique study of gold oxidation and semiconducting properties of the compact α-oxide layer A multi-technique study of gold oxidation and semiconducting properties of the compact α-oxide layer](/preview/png/220486.png)
چکیده انگلیسی
The initial stage of gold oxidation at the quartz crystal electrode in a near neutral solution was studied by using potentiostatic and potentiodynamic sweep methods. The underpotential deposition of OH radicals was the first stage of the nucleation and formation of the phase oxide Au2O3. The composition of the oxide was determined by the X-ray photoemission spectroscopy (XPS). Three-dimensional (3D) progressive nucleation occurred under diffusion control. The electronic structure of the compact α-oxide film and the charge distribution at the oxide layer/electrolyte interface were examined using photopotential and capacitance measurements. Anodically formed oxide film on gold was highly-doped defect semiconductor of n-type conductivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electroanalytical Chemistry - Volume 629, Issues 1–2, 15 April 2009, Pages 43–49
Journal: Journal of Electroanalytical Chemistry - Volume 629, Issues 1–2, 15 April 2009, Pages 43–49
نویسندگان
Ž. Petrović, M. Metikoš-Huković, R. Babić, J. Katić, M. Milun,