کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
280609 | 1430371 | 2007 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electromigration induced strain field simulations for nanoelectronics lead-free solder joints
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی عمران و سازه
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چکیده انگلیسی
Electromigration is a major road block on the way to realization of nanoelectronics. Determination of plastic deformation under high current density is critical for prediction of electromigration failure. A new displacement–diffusion coupled model is proposed and implemented using finite element method. The model takes into account viscoplastic behavior of solder alloys, as a result, vacancy concentration evolution and electromigration process are accurately simulated. Finite element simulations were performed for lead-free solder joints under high current density and compared with experimental moiré interferometry measurements. The comparison validates the model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Solids and Structures - Volume 44, Issues 14–15, July 2007, Pages 4909–4924
Journal: International Journal of Solids and Structures - Volume 44, Issues 14–15, July 2007, Pages 4909–4924
نویسندگان
Cemal Basaran, Minghui Lin,