کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4922544 | 1430185 | 2017 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermomechanical finite element modeling of Cu-SiO2 direct hybrid bonding with a dishing effect on Cu surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی عمران و سازه
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermomechanical finite element modeling of Cu-SiO2 direct hybrid bonding with a dishing effect on Cu surfaces Thermomechanical finite element modeling of Cu-SiO2 direct hybrid bonding with a dishing effect on Cu surfaces](/preview/png/4922544.png)
چکیده انگلیسی
Copper direct bonding technology is considered to be one of the most promising approaches for matching the miniaturization needs in future tridimensional integrated high performance circuits (3D-IC). However, the bonding mechanism of copper surfaces with an initial dishing effect, induced by the polishing step, must be investigated in order to optimize the adhesion process and prevent further reliability issues. In this study, we present thermomechanical finite element simulations of Cu-SiO2 hybrid bonding with account for the annealing step and various amplitudes of the initial dishing. A cohesive model that mimics nonlinear interactions between Cu/Cu and SiO2/SiO2 interfaces and related bonding mechanism is implemented within a nonlinear contact mechanics strategy. The bonding process along with the influence of the annealing conditions and the copper plastic response on the closure of the Cu/Cu interface are investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Solids and Structures - Volume 117, 15 June 2017, Pages 208-220
Journal: International Journal of Solids and Structures - Volume 117, 15 June 2017, Pages 208-220
نویسندگان
Y. Beilliard, R. Estevez, G. Parry, P. McGarry, L. Di Cioccio, P. Coudrain,