Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation

The purpose of this paper is to present a complete analysis of the gate leakage-current behaviour during short-circuit (SC) fault operation of 1200 V SiC MOSFETs from five different manufacturers including planar and trench-gate structures. Ruggedness and gate leakage level are evaluated in function of the chip size. Finally, the gate leakage current is modelled and the robustness tested.