کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971834 | 1450536 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of voltage stress on the single event upset (SEU) response of 65Â nm flip flop
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
A newly integrated pulsed laser system has been utilized to investigate the effects of voltage stress on single event upset (SEU) of flip flop chain manufactured in 65Â nm bulk CMOS technology. Laser mappings of the flip flop chain revealed that the SEU sensitive regions increased with laser energy. Post-processing of the data from the laser mapping facilitated the plotting of the cross-section versus laser energy curve. We found a clear shift in the cross-section curves after voltage stress of 130Â h. Comparisons of data revealed at least a doubled increase in sensitive areas after voltage stress. During the voltage stress, various electrical parameters were monitored and changes were observed. It was found that the increase in SEU sensitivity is related to electrical parameter changes and SPICE simulation results concur likewise.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 64, September 2016, Pages 199-203
Journal: Microelectronics Reliability - Volume 64, September 2016, Pages 199-203
نویسندگان
C.T. Chua, H.G. Ong, K. Sanchez, P. Perdu, C.L. Gan,