Research PaperThickness dependent growth of low temperature atomic layer deposited zinc oxide films

- Polycrystalline columnar ZnO thin films deposited by ALD at low temperatures.
- Higher deposition temperature leads to a greater surface roughness in the ALD ZnO films.
- Higher temperature originates larger refractive index values of the ALD ZnO films.
- ZnO thin films were denser as the numbers of ALD deposition cycles were larger.
- XPS analysis revels mayor extent of the DEZ reaction during the ALD process.

Zinc oxide films are promising to improve the performance of electronic devices, including those based on organic materials. However, the dependence of the ZnO properties on the preparation conditions represents a challenge to obtain homogeneous thin films that satisfy specific applications. Here, we prepared ZnO films of a wide range of thicknesses by atomic layer deposition (ALD) at relatively low temperatures, 150 and 175 °C. From the results of X-ray photoelectron spectroscopy, X-ray diffraction and Spectroscopic Ellipsometry it is concluded that the polycrystalline structure of the wurtzite is the main phase of the ALD samples, with OH groups on their surface. Ellipsometry revealed that the temperature and the deposition cycles have a strong effect on the films roughness. Scanning electron micrographs evidenced such effect, through the large pyramids developed at the surface of the films. It is concluded that crystalline ZnO thin films within a broad range of thickness and roughness can be obtained for optic or optoelectronic applications.