کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4993489 | 1458026 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Near-junction “hot spot” suppression with integral SiC microcontact TEC
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
جریان سیال و فرایندهای انتقال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transistor heat generation in wide bandgap power amplifier transistors is today in excess of several kW/cm2 and can result in temperature spikes, or “hotspots,” approaching 100Â K in the near-junction region. Novel, high flux cooling techniques are under development to enable successful exploitation of the inherent operational capability of wide bandgap amplifiers. Micro-contact enhanced thermoelectric coolers, using an integral pillar etched directly in the electronic substrate to concentrate cooling on the sub-mm transistor hotspot, is a most promising near-junction thermal management technique. This paper reports an experimental and numerical study of micro-contact enhanced thermoelectric cooling of a 5Â kW/cm2 hotspot on a SiC substrate, demonstrating a “world record” 12Â K temperature reduction for such high flux, using a commercial thermoelectric module. Moreover, using the validated numerical model, it is predicted that a 5Â kW/cm2 hotspot could be cooled by up to 30Â K using an optimized micro-contact and substrate geometry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 115, Part A, December 2017, Pages 530-536
Journal: International Journal of Heat and Mass Transfer - Volume 115, Part A, December 2017, Pages 530-536
نویسندگان
Michael Manno, Bao Yang, Avram Bar-Cohen,