Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs

Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 116, January 2018, Pages 496-506

Qing Hao, Hongbo Zhao, Yue Xiao, Michael Brandon Kronenfeld,