Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

This paper demonstrated AlGaN/GaN ion-sensitive field-effect transistors with O2 plasma treatment. This figure shows the average sensitivities of the four ISFETs (N = 4) with the O2 plasma treatment for different treatment time. The sensitivities of these ISFETs have an increasing tendency under the short-time O2 plasma treatment. While increasing the treatment time to a relative long term, the sensitivities of the ISFETs decreased dramatically.47