کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010195 | 1462196 | 2017 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical performance of mid wavelength HgCdTe(1Â 0Â 0) heterostructure infrared detectors
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The paper presents a theoretical study of the p+BpnN+ design based on HgCdTe(1Â 0Â 0) layers, which significantly improves the performance of detectors optimized for the mid-wave infrared spectral range. p+BpnN+ design combines the concept of a high impedance photoconductor with double layer hetero-junction device. Zero valence band offset approximation throughout the p+Bpn heterostructure allows flow of only minority holes generated in the absorber, what in a combination with n-N+ exclusion junction provides the Auger suppression. Modeling shows that by applying a low doping active layer, it is possible to achieve an order of magnitude lower dark current densities than those determined by “Rule 07”. A key to its success is a reduction of Shockley-Read-Hall centers associated with native defects, residual impurities and misfit dislocations. Reduction of metal site vacancies below 1012Â cmâ3 and dislocation density to 105Â cmâ2 allow to achieve a background limited performance at 250Â K. If the background radiation can be reduced, operation with a three- or four-stage thermo-electric-cooler may be possible.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 137, November 2017, Pages 102-108
Journal: Solid-State Electronics - Volume 137, November 2017, Pages 102-108
نویسندگان
M. Kopytko,