کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010205 | 1462201 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stacked resistive switches for AND/OR logic gates
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
This paper reports the use of stacked resistive switches as logic gates for implementing the “AND” and “OR” operations. These stacked resistive switches consist of two resistive switches that share a middle electrode, and they operate based on the difference in resistance between the low and high resistance states indicating the logical states of “0” and “1”, respectively. The stacked resistive switches can perform either AND or OR operation, using two read schemes in one device. To perform the AND (or OR) operation, two resistive switches are arranged in a serial (or parallel) connection. AND and OR operations have been successfully demonstrated using the stacked resistive switches. The use of stacked resistive switches as logic gates that utilize the advantages of memristive devices shows the possibility of stateful logic circuits.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 132, June 2017, Pages 45-48
Journal: Solid-State Electronics - Volume 132, June 2017, Pages 45-48
نویسندگان
Myung Ju Kim, Kyung Rock Son, Ju Hyun Park, Tae Geun Kim,