کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010213 | 1462201 | 2017 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in positive threshold voltage shift (ÎVth), which is attributed to the trapping of electrons from the GaN layer into the pre-existing oxide traps. The trapping rate exhibits a universal decreasing behavior as a function of the number of filled traps, independently of stress time, stress voltage, stress temperature, and device-to-device variability. The stress-induced ÎVth can be fully recovered by applying a small negative voltage, which causes the electron de-trapping. In the explored time window (between 1Â s and thousands of s), the recovery dynamics is well described by the superimposition of two exponential functions associated with two different traps. Both trap time constants are independent of the stress voltage, decrease with temperature and increase with the recovery voltage. The activation energy of the slower trap is 0.93Â eV, while the faster trap exhibits an activation energy with a large spread in the range between 0.45Â eV and 0.82Â eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 132, June 2017, Pages 49-56
Journal: Solid-State Electronics - Volume 132, June 2017, Pages 49-56
نویسندگان
E. Acurio, F. Crupi, P. Magnone, L. Trojman, G. Meneghesso, F. Iucolano,