کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010231 | 1462198 | 2017 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The investigations of characteristics of Sb2Te as a base phase-change material
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Chalcogenide alloys are paid much attention in the study of nonvolatile phase-change memory (PCM). A comprehensive research is investigated on Sb2Te (ST), a base material, from properties to performances in this paper. For the characteristics of ST films, the sheet resistance is extremely stable during cooling process in resistance-temperature measurement and the thickness change of ST film is 5.7%. However, low 10-year data retention temperature (â¼55 °C) and large crystal grain are the demerits for ST. In addition, the structure characteristics show stable hexagonal phase and large grain of several hundred nanometers at crystalline state after annealing. As for electrical properties, although the ST-based PCM devices are characterized by fast operation speed of â¼20 ns, only about 8 Ã 103 times of stable operation cycles can be obtained. After that, the endurance performance deteriorates gradually due to the growth of grains. About resistance drift, the drift coefficients are very small both in crystalline state and in amorphous state.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 135, September 2017, Pages 31-36
Journal: Solid-State Electronics - Volume 135, September 2017, Pages 31-36
نویسندگان
Guangyu Liu, Liangcai Wu, Min Zhu, Zhitang Song, Feng Rao, Sannian Song, Yan Cheng,