کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010254 | 1462200 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reliability improvement in GaN HEMT power device using a field plate approach
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Reliability improvement in GaN HEMT power device using a field plate approach Reliability improvement in GaN HEMT power device using a field plate approach](/preview/png/5010254.png)
چکیده انگلیسی
This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 133, July 2017, Pages 64-69
Journal: Solid-State Electronics - Volume 133, July 2017, Pages 64-69
نویسندگان
Wen-Hao Wu, Yueh-Chin Lin, Ping-Chieh Chin, Chia-Chieh Hsu, Jin-Hwa Lee, Shih-Chien Liu, Jer-shen Maa, Hiroshi Iwai, Edward Yi Chang, Heng-Tung Hsu,