کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010316 | 1462205 | 2017 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reliable gate stack and substrate parameter extraction based on C-V measurements for 14Â nm node FDSOI technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Reliable gate stack and substrate parameter extraction based on C-V measurements for 14Â nm node FDSOI technology Reliable gate stack and substrate parameter extraction based on C-V measurements for 14Â nm node FDSOI technology](/preview/png/5010316.png)
چکیده انگلیسی
Effective work function and equivalent oxide thickness are fundamental parameters for technology optimization. In this work, a comprehensive study is done on a large set of FDSOI devices. The extraction of the gate stack parameters is carried out by fitting experimental CV characteristics to quantum simulation, based on self-consistent solution of one dimensional Poisson and Schrodinger equations. A reliable methodology for gate stack parameters is proposed and validated. This study identifies the process modules that impact directly the effective work function from those that only affect the device threshold voltage, due to the device architecture. Moreover, the relative impacts of various process modules on channel thickness and gate oxide thickness are evidenced.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 128, February 2017, Pages 10-16
Journal: Solid-State Electronics - Volume 128, February 2017, Pages 10-16
نویسندگان
B. Mohamad, C. Leroux, D. Rideau, M. Haond, G. Reimbold, G. Ghibaudo,