Steep sub-threshold current slope (∼2 mV/dec) Pt/Cu2S/Pt gated memristor with lon/Ioff > 100

Memristors with steep off-on transitions and high “on” currents are excellent candidates for very low power and efficient electronics. Owing to their switching mechanism based on ion motion and oxidation/reduction process, memristors bridge the gap between MEMS and MOSFETs. They have better reliability similar to MOSFETS and at the same time have the more desirable off-to-on current ratios of MEMS. Here we show that by adding a gate electrode to memristors, the SET/RESET voltages in electrochemical memristors can be controlled enabling their applications in circuits with high input/output isolations. We discuss devices with 2 mV/dec sub-threshold slope and show that the gate field effect can be used to modify the SET/RESET voltages considerably. In addition to enabling very low power switches using memristors, the gate can also be used as a global RESET.