کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010351 | 1462206 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Steep sub-threshold current slope (â¼2 mV/dec) Pt/Cu2S/Pt gated memristor with lon/Ioff > 100
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Steep sub-threshold current slope (â¼2 mV/dec) Pt/Cu2S/Pt gated memristor with lon/Ioff > 100 Steep sub-threshold current slope (â¼2 mV/dec) Pt/Cu2S/Pt gated memristor with lon/Ioff > 100](/preview/png/5010351.png)
چکیده انگلیسی
Memristors with steep off-on transitions and high “on” currents are excellent candidates for very low power and efficient electronics. Owing to their switching mechanism based on ion motion and oxidation/reduction process, memristors bridge the gap between MEMS and MOSFETs. They have better reliability similar to MOSFETS and at the same time have the more desirable off-to-on current ratios of MEMS. Here we show that by adding a gate electrode to memristors, the SET/RESET voltages in electrochemical memristors can be controlled enabling their applications in circuits with high input/output isolations. We discuss devices with 2Â mV/dec sub-threshold slope and show that the gate field effect can be used to modify the SET/RESET voltages considerably. In addition to enabling very low power switches using memristors, the gate can also be used as a global RESET.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 127, January 2017, Pages 20-25
Journal: Solid-State Electronics - Volume 127, January 2017, Pages 20-25
نویسندگان
N.I. Mou, Y. Zhang, P. Pai, M. Tabib-Azar,