کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010356 | 1462206 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Device characteristics and thermal analysis of GaN-based vertical light-emitting diodes with different types of packages
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated the device characteristics of GaN-based blue vertical light-emitting diodes (VLEDs) with two different package structures (i.e., lead frame with metal/plastic body (MPLF package) and lead frame with metal body (MLF package)) under various measurement conditions. In comparison with the MPLF packaged VLEDs, the MLF packaged VLEDs exhibited relatively lower junction temperature and thermal resistance values due to the better heat dissipation capability, leading to further improved optical, spectral, and thermal device characteristics. Thermal simulations of the VLEDs with two different packages were performed using three-dimensional steady-state device models to theoretically calculate their thermal and mechanical behaviours. The maximum temperatures, internal temperature distributions, and thermomechanical stresses were analysed by a finite element method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 127, January 2017, Pages 51-56
Journal: Solid-State Electronics - Volume 127, January 2017, Pages 51-56
نویسندگان
Xiang-Yu Guan, Hee Kwan Lee, Soo Hyun Lee, Jae Su Yu,