Design guidelines for GaSb/InAs TFET exploiting strain and device size

A simulation study exploring the possibility of performance improvements for GaSb/InAs nanowire TFETs under appropriate stress conditions is carried out. It is demonstrated that biaxial tensile strain induces a remarkable enhancement of the on-state current thanks to bandgap reduction; however, a degradation of the ambipolar behavior is observed as well. Some stress intensity values and device geometry configurations are investigated. The best simulated device can achieve an on/off current ratio of about 3×107 with ION≈0.33 mA/μm at VDD=0.3 V.