کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5010425 1462207 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of hydrogen anneal on low frequency noise of n- and p-MOSFET
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Impact of hydrogen anneal on low frequency noise of n- and p-MOSFET
چکیده انگلیسی
In this paper, we present a detailed investigation of the impact of hydrogen anneal on the low frequency noise spectra of n- and p-MOS devices from an advanced CMOS technology node. We investigate the impact of hydrogen anneal in three different wafers, one with one time hydrogen anneal step (1×H2), one with two times (2×H2) and one without hydrogen anneal (w/o H2). The results demonstrate that the carrier number with correlated mobility fluctuations model can explain accurately the 1/f noise results. A significant reduction of the 1/f noise level was observed for the device treated with two times hydrogen anneal.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 126, December 2016, Pages 158-162
نویسندگان
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