کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010458 | 1462208 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Contact resistance study of various metal electrodes with CVD graphene
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, the contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying channel widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and platinum/gold. The lowest value of 92 Ω μm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of â40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450 °C for 1 h in argon-95%/hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 125, November 2016, Pages 234-239
Journal: Solid-State Electronics - Volume 125, November 2016, Pages 234-239
نویسندگان
Amit Gahoi, Stefan Wagner, Andreas Bablich, Satender Kataria, Vikram Passi, Max C. Lemme,