| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 5011594 | 1462597 | 2017 | 20 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Modeling and character analyzing of current-controlled memristors with fractional kinetic transport
												
											ترجمه فارسی عنوان
													مدلسازی و تحلیل شخصیت از ممریستورهای کنترل شده با جریان با انتقال جنبشی کسری 
													
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																																												کلمات کلیدی
												ممریستور، کنترل کنونی زمان اشباع، محاسبات مکرر،
																																							
												موضوعات مرتبط
												
													مهندسی و علوم پایه
													سایر رشته های مهندسی
													مهندسی مکانیک
												
											چکیده انگلیسی
												Memristors have come into limelight again after it was realized by HP researchers. This paper proposes a memristor model which can be called fractional-order current-controlled memristor, and it is more general and comprehensive. We introduce the fractional integral/differential to the current-controlled memristor model and model memristor with fractional kinetic of charge transport. An interesting phenomena found out is that the I-V characteristic is a triple-loop curve (0 < α < 1) and not the conventional double-loop I-V curve (α=1). Memristance (RM) is analyzed versus the fractional order α and time(t), and it reach saturation faster when 0 < α < 1. The saturation (Rmin â Rmax) time is given and analyzed versus different orders α and frequencies Ï, which increase with α increasing and Ï decreasing. More importantly, the memristors can't reach the Rmaxâ in some cases. Energy loss of the model is analyzed, and the I-P curves isn't origin-symmetric when 0 < α < 1 which is very different with curves when α=1.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Communications in Nonlinear Science and Numerical Simulation - Volume 48, July 2017, Pages 224-235
											Journal: Communications in Nonlinear Science and Numerical Simulation - Volume 48, July 2017, Pages 224-235
نویسندگان
												Gangquan Si, Lijie Diao, Jianwei Zhu, Yuhang Lei, Oresanya Babajide, Yanbin Zhang, 
											