Enhancement mode GaN MOSFET for high power applications using AlGaN/GaN heterostructure

This paper presents an enhancement mode GaN MOSFET based on AlGaN/GaN heterostructure suitable for high power applications. Immensely high 2 dimensional electron gas (2DEG) density attained at the AlGaN/GaN heterostructure aids to support more output current. Normally off working of the device is obtained by the replacement of AlGaN barrier layer with proper gate insulator, which helps to minimize the power dissipation from the device. DC analysis carried out in Sentaurus TCAD shows notable enhancement in the output current. This device has less OFF current so that the power leakage from the device is small. The initial simulation results showed the value of drain current is 5.357 × 10−1 A at 10 V gate supply and the threshold voltage of the device is 0.932 V. The OFF current estimation A has given the value of leakage current is 1.719 × 10−7 A. Thermal analysis on the device shows that the average temperature rise inside the device is less as compared to the one with Si substrate.