کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5146674 1497346 2017 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrogen sensors based on noble metal doped metal-oxide semiconductor: A review
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
Hydrogen sensors based on noble metal doped metal-oxide semiconductor: A review
چکیده انگلیسی
With the exhaustion of traditional energy, increasing attention has been paid on the new energy resources like H2. Because of its inflammable and explosive properties, it is imperative and challenging to detect ppm-level H2 during the transport and use process. This paper firstly introduces the working principles and sensing mechanism of the hydrogen sensors based on noble metal doped metal-oxide semiconductors. Then, this paper focuses on the advancement of noble metal doped metal oxide hydrogen sensors, especially the room temperature hydrogen sensors, in the recent years. At the end, we propose that fabricating semiconductors with special morphologies, using two different noble metals for bimetallic doping or composite semiconductors with 2D nanomaterials like graphene/MoS2 to improve the room temperature sensing properties towards low H2 concentration should be the emphasis for the future work.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 42, Issue 31, 3 August 2017, Pages 20386-20397
نویسندگان
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