کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5147425 | 1497384 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The fuel cells studies from ionic electrolyte Ce0.8Sm0.05Ca0.15O2âδ to the mixture layers with semiconductor Ni0.8Co0.15Al0.05LiO2âδ
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The mixture of ionic electrolyte Ce0.8Sm0.05Ca0.15O2âδ (SCDC) and semiconductor Ni0.8Co0.15Al0.05LiO2âδ (NCAL) layers was used for low temperature solid oxide fuel cell (LT-SOFC) applications. Using the as-prepared SCDC-NCAL semiconductor-ionic layer to replace the ionic SCDC electrolyte, following results have been obtained: the SCDC electrolyte fuel cell reached a lower voltage, 1.05 V, and lower power output, 415 mW cmâ2, compared to that using the semiconductor-ionic layer, 1.06 V and 617 mW cmâ2 at 550 °C. The electrochemical impedance spectroscopy (EIS) was applied to investigate the electrochemical processes of the device; X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM) for the microstructure and morphology of the as-prepared materials. The results have illuminated that the introduction of semiconductor into ionic electrolyte could make extended triple phase boundary (TPB) area, which can provide more active sites to accelerate the fuel cell reactions and enhance the cell performance. Furthermore, we also discovered that the ionic SCDC and electronic NCAL should be in an appropriate composition to achieve a balanced ionic and electronic conductivity, which is the key issue for high performance semiconductor-ionic fuel cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 41, Issue 41, 2 November 2016, Pages 18761-18768
Journal: International Journal of Hydrogen Energy - Volume 41, Issue 41, 2 November 2016, Pages 18761-18768
نویسندگان
Wei Zhang, Yixiao Cai, Baoyuan Wang, Hui Deng, Chu Feng, Wenjing Dong, Junjiao Li, Bin Zhu,