کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5148179 | 1497380 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Efficiency optimization of the structure pin-InGaN/GaN and quantum well-InGaN for solar cells
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Efficiency optimization of the structure pin-InGaN/GaN and quantum well-InGaN for solar cells Efficiency optimization of the structure pin-InGaN/GaN and quantum well-InGaN for solar cells](/preview/png/5148179.png)
چکیده انگلیسی
In this aim, we were interested in the optimization and simulation of pin-In1âxGaxN structure and InGaN multi quantum well structures for photovoltaic applications. This ternary alloy which is an III-V semiconductor presents important characteristics especially its gap energy, thus, the increase of the photons absorption of wavelengths. It has been shown that the increase in indium concentration increases the current density Jsc and the maximum output power. In return, the Voc decreases consequently. For In0.50Ga0.50N structure we observed that the current density and the maximum power are respectively around 19.50Â mA/cm2 and 27.50Â mW/cm2 with a ratio of 21.65Â mA/cm2. Also it is shown that the incorporation of the quantum well in the active region results in an increase of Jsc and Pmax but Voc remains unchanged. The incorporation of 50 quantum well structure in the In0.50Ga0.50N gives 22Â mA/cm2 of the current density and 32Â mW/cm2 of the maximum output power. The use of the structure based on In0.50Ga0.50N (MQW) induces an efficiency of 32%. We deduced that the relative efficiency is improved by 10.9%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 41, Issue 45, 7 December 2016, Pages 20867-20873
Journal: International Journal of Hydrogen Energy - Volume 41, Issue 45, 7 December 2016, Pages 20867-20873
نویسندگان
A. Aissat, H. Arbouz, S. Nacer, F. Benyettou, J.P. Vilcot,